bd246, bd246a, bd246b, bd246c pnp silicon power transistors
1 june 1973 - revised september 2002 specifications are subject to change without notice. designed for complementary use with the bd245 series 80 w at 25c case temperature 10 a continuous collector current 15 a peak collector current customer-specified selections available absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 0.3 ms, duty cycle 10%. 2. derate linearly to 150c case temperature at the rate of 0.64 w/c. 3. derate linearly to 150c free air temperature at the rate of 24 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on) = -0.4 a, r be = 100 ? , v be(off) = 0, r s = 0.1 ? , v cc = -20 v. rating symbol value unit collector-emitter voltage (r be = 100 ? ) bd246 bd246a bd246b bd246c v cer -55 -70 -90 -115 v collector-emitter voltage (i c = -30 ma) bd246 bd246a bd246b bd246c v ceo -45 -60 -80 -100 v emitter-base voltage v ebo -5 v continuous collector current i c -10 a peak collector current (see note 1) i cm -15 a continuous base current i b -3 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 80 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 3w unclamped inductive load energy (see note 4) ?li c 2 62.5 mj operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 250 c sot-93 package (top view) pin 2 is in electrical contact with the mounting base. mdtraaa b c e 1 2 3
bd246, bd246a, bd246b, bd246c pnp silicon power transistors 2
june 1973 - revised september 2002 specifications are subject to change without notice. notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = -30 ma (see note 5) i b = 0 bd246 bd246a bd246b bd246c -45 -60 -80 -100 v i ces collector-emitter cut-off current v ce = -55 v v ce = -70 v v ce = -90 v v ce = -115 v v be =0 v be =0 v be =0 v be =0 bd246 bd246a bd246b bd246c -0.4 -0.4 -0.4 -0.4 ma i ceo collector cut-off current v ce = -30 v v ce = -60 v i b =0 i b =0 bd246/246a bd246b/246c -0.7 -0.7 ma i ebo emitter cut-off current v eb = -5 v i c =0 -1 ma h fe forward current transfer ratio v ce = -4 v v ce = -4 v v ce = -4 v i c = -1 a i c = -3 a i c = -10 a (see notes 5 and 6) 40 20 4 v ce(sat) collector-emitter saturation voltage i b = -0.3 a i b = -2.5 a i c = -3 a i c = -10 a (see notes 5 and 6) -1 -4 v v be base-emitter voltage v ce = -4 v v ce = -4 v i c = -3 a i c = -10 a (see notes 5 and 6) -1.6 -3 v h fe small signal forward current transfer ratio v ce = -10 v i c =-0.5a f = 1 khz 20 | h fe | small signal forward current transfer ratio v ce = -10 v i c =-0.5a f = 1 mhz 3 thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.56 c/w r ja junction to free air thermal resistance 42 c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = -1 a v be(off) = 3.7 v i b(on) = -0.1 a r l = 20 ? i b(off) = 0.1 a t p = 20 s, dc 2% 0.2 s t off turn-off time 0.8 s
bd246, bd246a, bd246b, bd246c pnp silicon power transistors 3
june 1973 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a -01 -10 -10 h fe - dc current gain 1 10 100 1000 tcs634ag v ce = -4 v t c = 25c t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs base current i b - base current - a -001 -01 -10 -10 v ce(sat) - collector-emitter saturation voltage - v -001 -01 -10 -10 tcs634ab i c = -1 a i c = -3 a i c = -6 a i c = -10 a base-emitter voltage vs collector current i c - collector current - a -01 -10 -10 v be - base-emitter voltage - v -06 -08 -10 -12 -14 -16 tcs634ac v ce = -4 v t c = 25 c
bd246, bd246a, bd246b, bd246c pnp silicon power transistors 4
june 1973 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v -10 -10 -100 -1000 i c - collector current - a -001 -01 -10 -10 -100 sas634ac bd246 bd246a bd246b bd246c t p = 300 s, d = 0.1 = 10% t p = 1 ms, d = 0.1 = 10% t p = 10 ms, d = 0.1 = 10% dc operation maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 20 40 60 80 100 tis633aa
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